Low-Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM

被引：0

作者：

Fukami, S. ^{[1
]}

Suzuki, T. ^{[1
]}

Nagahara, K. ^{[1
]}

Ohshima, N. ^{[1
]}

Ozaki, Y. ^{[2
]}

Saito, S. ^{[1
]}

Nebashi, R. ^{[1
]}

Sakimura, N. ^{[1
]}

Honjo, H. ^{[1
]}

Mori, K. ^{[1
]}

Igarashi, C. ^{[1
]}

Miura, S. ^{[1
]}

Ishiwata, N. ^{[1
]}

Sugibayashi, T. ^{[1
]}

机构：

[1] NEC Corp Ltd, Device Platforms Res Labs, 1120 Shimokuzawa, Sagamihara, Kanagawa 2291198, Japan

[2] NEC Elect Corp, Adv Device Dev Div, Sagamihara, Kanagawa 2291198, Japan

来源：

2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a new magnetic random access memory with current-induced domain wall (DW) motion (DW-motion MRAM). We confirmed its potential of 0.1-mA and 2-ns writing with sufficient thermal stability. The obtained properties indicate that this M RAM can replace conventional high-speed embedded memories.

引用

页码：230 / +

页数：2

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