Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography

被引：15

作者：

Ngamo, M. ^{[1
,2
]}

Duguay, S. ^{[1
,2
]}

Pichler, P. ^{[3
]}

Daoud, K. ^{[1
,2
]}

Pareige, P. ^{[1
,2
]}

机构：

[1] Univ Rouen, Grp Phys Mat, F-76801 St Etienne, France

[2] INSA Rouen, CNRS, UMR 6634, F-76801 St Etienne, France

[3] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 09期

关键词：

Ion implantation; Atom probe tomography; Spreading resistance profiling; Arsenic; Segregation; Crystalline silicon;

D O I：

10.1016/j.tsf.2009.08.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dopant loss due to the segregation and dopant pile Lip at the Si/SiO2 interface are crucial phenomena in the scaling trend of MOSFET devices for the 22-nm technology node Arsenic segregation and pile-up at the Si/SiO2 interface have been studied by the atom probe tomography (APT) technique which allows the 3D observation and the chemical analyses of dopant distribution with the atomic scale resolution. Arsenic (10(16) at/cm(2), 32 keV) was implanted in mono-crystalline silicon and then annealed at 900 degrees C for 6 h after a cleaning step and an oxide growing The thickness of the segregation layer was determined at 2.3 nm containing 9 36 x 10(14) at/cm(2) dose of segregated arsenic. Finally. the obtained arsenic segregated dose has been compared to the resistivity profile performed by spreading resistance profiling technique. (C) 2009 Elsevier B V All rights reserved

引用

页码：2402 / 2405

页数：4

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