Characterization of crystalline defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography

被引：42
作者：
Masuya, Satoshi [1 ]
Sasaki, Kohei [2 ]
Kuramata, Akito [2 ]
Yamakoshi, Shigenobu [3 ]
Ueda, Osamu [4 ]
Kasu, Makoto [1 ]
机构：
[1] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan
[2] Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan
[3] Tamura Corp, Sayama, Saitama 3501328, Japan
[4] Kanazawa Inst Technol, Grad Sch Engn, Minato Ku, Tokyo 1050002, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 05期
关键词：
OPTICAL-ABSORPTION; BAND-EDGE; PHOTOCONDUCTIVITY; CONDUCTIVITY; SYSTEM;
D O I：
10.7567/1347-4065/ab0dba
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Here, we investigate the dislocations in beta-Ga2O3 single crystals grown by edge-defined film-fed growth (EFG) and halide vapor-phase epitaxy (HVPE) using synchrotron X-ray topography. The (001)- and ((2) over bar 01)-oriented crystals grown in the [010] direction by EFG exhibited dislocations along the < 010 > direction with some dislocations oriented in a line; in addition, wandering dislocations were observed on the (001) surface. Based on the invisibility criterion, the Burgers vector of some dislocations was determined to be < 010 >. On the other hand, in the (001) film grown by HVPE over the EFG substrate, threading dislocations propagating in the [001] direction were observed. Furthermore, it was found that the dislocations on the substrate grown by EFG were inherited by the film formed by HVPE: a dislocation was generated in the film grown by HVPE at both ends of the void defects in the substrate grown by EFG. (C) 2019 The Japan Society of Applied Physics
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页数：5
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