Effect of Growth Temperature on Physical Properties of MoS2 Thin Films Synthesized by CVD

Due to the application of two-dimensional crystals in different fields, high-quality growth of these materials has attracted more attention from researchers. High-quality monolayer MoS2 with single crystals up to 20 microns in size has been formed on Si substrate by the chemical vapor deposition method. A comprehensive study was carried out on the prepared MoS2 thin films using optical microscopy, atomic force microscopy, x-ray diffraction (XRD) analysis, and Raman spectroscopy. It was concluded that the growth temperature affected the morphology and structure of the synthesized MoS2 sheets. The XRD spectra confirmed that the peak intensity and resolution were highly dependent on the growth temperature. Raman spectroscopy showed that monolayer MoS2 was grown on the silicon substrate at higher temperature, as proved by the Raman frequency difference (similar to 19 cm(-1)) between two characteristic modes (E-2g(1) and A(1g)). Atomic force micrographs of the films showed the evolution of the surface morphology as a function of the growth temperature.