High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition

被引:37
作者
Teraji, T [1 ]
Arima, K [1 ]
Wada, H [1 ]
Ito, T [1 ]
机构
[1] Osaka Univ, Dept Elect Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan
基金
日本学术振兴会;
关键词
D O I
10.1063/1.1805180
中图分类号
O59 [应用物理学];
学科分类号
摘要
Boron-doped homoepitaxial diamond (100) films with substantially flat surface have been deposited by a high-power microwave-plasma chemical-vapor-deposition (MPCVD) method. Hall mobilities of 1500 cm(2)/V s at 290 K and 2220 cm(2)/V s at 235 K were attained for such a specimen with an acceptor density of 1.4x10(18) cm(-3) grown at a growth rate of 3.5 mum/h. These mobilities are comparable with those of the highest quality homoepitaxial diamond grown by a standard low-power MPCVD method, where the growth rate and carrier concentration were, respectively, similar to1/30 and 1/5 of the corresponding values attained in the present case. This fact verifies that the high-power MPCVD is suitable for deposition of a high quality and high carrier-concentration p-type diamond at a reasonably high growth rate. (C) 2004 American Institute of Physics.
引用
收藏
页码:5906 / 5908
页数:3
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