Tuning carbon nanotube band gaps with strain

被引：550

作者：

Minot, ED ^{[1
]}

Yaish, Y ^{[1
]}

Sazonova, V ^{[1
]}

Park, JY ^{[1
]}

Brink, M ^{[1
]}

McEuen, PL ^{[1
]}

机构：

[1] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.90.156401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that the band structure of a carbon nanotube (NT) can be dramatically altered by mechanical strain. We employ an atomic force microscope tip to simultaneously vary the NT strain and to electrostatically gate the tube. We show that strain can open a band gap in a metallic NT and modify the band gap in a semiconducting NT. Theoretical work predicts that band gap changes can range between +/-100 meV per 1% stretch, depending on NT chirality, and our measurements are consistent with this predicted range.

引用

页数：4

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