Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-μm emitting InGaAs quantum dots

被引：50

作者：

Sugawara, M ^{[1
]}

Mukai, K ^{[1
]}

Nakata, Y ^{[1
]}

Otsubo, K ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2000年 / 6卷 / 03期

关键词：

lasers; gain; quantum dots (QD's); semiconductor lasers; spontaneous emission; stimulated emission;

D O I：

10.1109/2944.865101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports recent developments of our self-assembled InGaAs quantum-dot (QD) lasers and their unique physical properties, We achieved a Low-threshold current of 5.4 mA at room temperature with our originally designed columnar-shaped QD's, and also, room-temperature 1.3-mu m continuous-wave (CW) lasing with self-assembled dots grown at a decreased growth rate and covered by a strained InGaAs layer, We discuss influence of homogeneous broadening of single-dot optical gain on lasing spectra, influence of nonradiative carrier recombination on temperature characteristics of threshold currents, a model for the origin of the homogeneous broadening, a finding of random telegraph signals, and suppression of temperature sensitivity of interband emission energy by covering dots with a strained InGaAs layer.

引用

页码：462 / 474

页数：13

共 36 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].