The silicon vacancy in SiC

被引：99

作者：

Janzen, Erik ^{[1
]}

Gali, Adam ^{[2
]}

Carlsson, Patrick ^{[1
]}

Gallstrom, Andreas ^{[1
]}

Magnusson, Bjorn ^{[1
,3
]}

Son, N. T. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

[3] Norstel AB, SE-60238 Norrkoping, Sweden

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 22期

基金：

新加坡国家研究基金会;

关键词：

Silicon vacancy; SiC; EPR; ODMR; PL; 4H;

D O I：

10.1016/j.physb.2009.09.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4354 / 4358

页数：5

共 7 条

[1] RADIATION-INDUCED DEFECTS IN CVD-GROWN 3C-SIC
ITOH, H
YOSHIKAWA, M
NASHIYAMA, I
MISAWA, S
OKUMURA, H
YOSHIDA, S
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) : 1732 - 1738
[2] Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR -: art. no. 235208
Mizuochi, N
Yamasaki, S
Takizawa, H
Morishita, N
Ohshima, T
Itoh, H
Umeda, T
Isoya, J
[J]. PHYSICAL REVIEW B, 2005, 72 (23)
[3] Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC -: art. no. 235202
Mizuochi, N
Yamasaki, S
Takizawa, H
Morishita, N
Ohshima, T
Itoh, H
Isoya, J
[J]. PHYSICAL REVIEW B, 2002, 66 (23) : 1 - 12
[4] Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study
Orlinski, SB
Schmidt, J
Mokhov, EN
Baranov, PG
[J]. PHYSICAL REVIEW B, 2003, 67 (12): : 8
[5] Silicon vacancy related defect in 4H and 6H SiC
Sörman, E
Son, NT
Chen, WM
Kordina, O
Hallin, C
Janzén, E
[J]. PHYSICAL REVIEW B, 2000, 61 (04): : 2613 - 2620
[6] Electronic structure of the neutral silicon vacancy in 4H and 6H SiC
Wagner, M
Magnusson, B
Chen, WM
Janzén, E
Sörman, E
Hallin, C
Lindström, JL
[J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16555 - 16560
[7] Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment
Wimbauer, T
Meyer, BK
Hofstatter, A
Scharmann, A
Overhof, H
[J]. PHYSICAL REVIEW B, 1997, 56 (12): : 7384 - 7388

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