Thin film of guest-free type-II silicon clathrate on Si(111) wafer

被引：30
作者：
Kume, Tetsuji [1 ]
Ohashi, Fumitaka [1 ]
Sakai, Kentaro [2 ]
Fukuyama, Atsuhiko [3 ]
Imai, Motoharu [4 ]
Udono, Haruhiko [5 ]
Ban, Takayuki [1 ]
Habuchi, Hitoe [6 ]
Suzuki, Hidetoshi [3 ]
Ikari, Tetsuo [3 ]
Sasaki, Shigeo [1 ]
Nonomura, Shuichi [1 ]
机构：
[1] Gifu Univ, Fac Engn, 1-1 Yanagido, Gifu 50111, Japan
[2] Miyazaki Univ, Ctr Collaborat Res & Community Cooperat, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Japan
[3] Miyazaki Univ, Fac Engn, 1-1 Gakuen Kibanadai Nishi, Miyazaki 88921, Japan
[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[5] Ibaraki Univ, Grad Sch Sci & Engn, Hitachi, Ibaraki 3168511, Japan
[6] Gifu Coll, Natl Inst Technol, Dept Elect & Comp Engn, Kamimakuwa 2236-2, Motosu, Gifu 5010495, Japan
来源：
THIN SOLID FILMS | 2016年 / 609卷
基金：
日本科学技术振兴机构;
关键词：
Si clathrate; Photovoltaic response; TEM observation; Thin film; ELECTRICAL-RESISTIVITY; CRYSTALLINE SILICON; SI; SCATTERING; NASI; FORM;
D O I：
10.1016/j.tsf.2016.03.056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of guest-free type-II Si clathrate (Si-136) were fabricated on Si(111) wafers in two steps: NaxSi136 thin-film formation by thermal decomposition of NaSi precursor films and Na removal from the NaxSi136 film by a heat treatment with iodine. Cross-sectional TEM observation and XRD and Raman measurements verified the formation of 1-mu m-thick Si-136 films on the Si wafer. Since the prepared films showed n-type conduction, pn junction devices were developed by a Si136/p-type Si structure. This device showed a photovoltaic (PV) response under white light illumination. The thin film formation and the PV response of Si136 indicated this Si allotrope to be the next-generation platform for semiconductor technology. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：30 / 34
页数：5
相关论文
共 15 条
  • [1] Structural Origin of Reversible Li Insertion in Guest-Free, Type-II Silicon Clathrates
    Dopilka, Andrew
    Weller, J. Mark
    Ovchinnikov, Alexander
    Childs, Amanda
    Bobev, Svilen
    Peng, Xihong
    Chan, Candace K.
    ADVANCED ENERGY AND SUSTAINABILITY RESEARCH, 2021, 2 (05):
  • [2] Electrochemical Lithium Alloying Behavior of Guest-Free Type II Silicon Clathrates
    Dopilka, Andrew
    Childs, Amanda
    Bobev, Svilen
    Chan, Candace K.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (35) : 19110 - 19118
  • [3] Intermediate bands in type-II silicon clathrate with Cu and Ag guest atoms
    Huang, Zhaohui
    Li, Huashan
    Lusk, Mark T.
    Wu, Zhigang
    PHYSICAL REVIEW B, 2017, 95 (19)
  • [4] Electron paramagnetic resonance study of type-II silicon clathrate with low sodium guest concentration
    Schenken, William K.
    Liu, Yinan
    Krishna, Lakshmi
    Majid, Ahmad A. A.
    Koh, Carolyn A.
    Taylor, P. Craig
    Collins, Reuben T.
    PHYSICAL REVIEW B, 2020, 101 (24)
  • [5] A fabrication method for type-II Ge clathrate film by annealing of Ge film covered with Na layer
    Kumar, Rahul
    Hazama, Yuta
    Ohashi, Fumitaka
    Jha, Himanshu S.
    Kume, Tetsuji
    THIN SOLID FILMS, 2021, 734
  • [6] Characterization of low sodium type II silicon clathrate film spin dynamics
    Briggs, Joseph P.
    Liu, Yinan
    Taylor, P. Craig
    Singh, Meenakshi
    Collins, Reuben T.
    Koh, Carolyn A.
    APPLIED PHYSICS LETTERS, 2024, 125 (20)
  • [7] Electron-Spin Resonance of Type II Si-Clathrate Thin Film for New Solar Cell Material
    Yamaga, Mitsuo
    Kishita, Takumi
    Kume, Tetsuji
    Uehara, Koki
    Nomura, Masaki
    Ohashi, Fumitaka
    Ban, Takayuki
    Nonomura, Shuichi
    3RD INTERNATIONAL CONGRESS ON ENERGY EFFICIENCY AND ENERGY RELATED MATERIALS (ENEFM2015), 2017,
  • [8] Prediction of optically-active transitions in type-VIII guest-free silicon clathrate Si46: A comparative study of its physical properties with type-I counterpart through principles
    Mahammedi, Nassim Ahmed
    Ferhat, Marhoun
    Tsumuraya, Takao
    Chikyow, Toyohiro
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (20)
  • [9] A thin film of a type II Ge clathrate epitaxially grown on a Ge substrate
    Kume, Tetsuji
    Ban, Takayuki
    Ohashi, Fumitaka
    Jha, Himanshu S.
    Sugiyama, Tomoya
    Ogura, Takuya
    Sasaki, Shigeo
    Nonomura, Shuichi
    CRYSTENGCOMM, 2016, 18 (30): : 5630 - 5638
  • [10] Solution of thin film magnetization problems in type-II superconductivity
    Prigozhin, L
    JOURNAL OF COMPUTATIONAL PHYSICS, 1998, 144 (01) : 180 - 193
12