The high-pressure semiconducting phase of LiBC

被引:8
|
作者
Zhang, Meiguang [1 ]
机构
[1] Baoji Univ Arts & Sci, Nonlinear Res Inst, Coll Phys & Optoelect Technol, Baoji 721016, Peoples R China
关键词
GENERALIZED GRADIENT APPROXIMATION; ELECTRONIC-STRUCTURE; LIXBC;
D O I
10.1209/0295-5075/114/16001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A high-pressure hexagonal semiconducting phase (space group P6(3)mc, 2f.u./cell) of LiBC stable above 108GPa was predicted through first-principles calculations combined with unbiased swarm structure searching techniques. This new phase consisted of three-dimensional B-C networks which originate from the dramatic out-of-plane distortions of the graphene-like B-C sublattice in the low-pressure P6(3)/mmc phase under compression. Contrary to the metallizations of LiBC under high pressure previously proposed, the resulting three-dimensional B-C framework lacks the system of p bonds with mobile electrons and has more localized electrons, as a result of the semiconducting nature of this high-pressure LiBC phase. Copyright (C) EPLA, 2016
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页数:5
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