An Improved Superjunction Structure With Variation Vertical Doping Profile

被引：33
作者：
Lin, Zhi [1 ]
Huang, Haimeng [1 ]
Chen, Xingbi [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610051, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Breakdown voltage (BV); electric field model; specific ON-resistance; variation vertical doping superjunction (VVD-SJ); ON-RESISTANCE; OPTIMIZATION;
D O I：
10.1109/TED.2014.2372819
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analysis of an improved superjunction structure with variation vertical doping profile (VVD-SJ) is presented in this brief. It features a better tradeoff between breakdown voltage (BV) and specific ON-resistance (R-on) than the prior art, due to a higher average doping concentration in columns. A simple 2-D electric field model of the VVD-SJ structure is derived based on charge superposition principle. Optimized results show that the specific ON-resistance of the VVD-SJ structure is reduced by similar to 10%, compared with the SJ one under the same BV and aspect ratio. The mainstream multiple epitaxial growth and implantation technology is suitable to fabricate the VVD-SJ power MOSFET without extra process cost.
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收藏
页码：228 / 231
页数：4
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