High resolution photoemission spectroscopy using synchrotron radiation study of the SiO2/β-SiC(100)3x2 interface composition

被引：4

作者：

Dunham, D ^{[1
]}

Soukiassian, P

Denlinger, JD

Tonner, BP

Rothenberg, E

机构：

[1] No Illinois Univ, Dept Phys, De Kalb, IL 60115 USA

[2] Ctr Etud Saclay, CEA, DSM, DRECAM,SRSIM, F-91191 Gif Sur Yvette, France

[3] Univ Paris Sud, Dept Phys, F-91405 Orsay, France

[4] Univ Wisconsin, Dept Phys, Milwaukee, WI 53201 USA

[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[6] Univ Oregon, Dept Phys, Eugene, OR 97403 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

surface; passivation; oxide; interface formation; core level photoemission spectroscopy; synchrotron radiation;

D O I：

10.4028/www.scientific.net/MSF.264-268.391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use high energy resolution synchrotron radiation core level photoemission spectroscopy to investigate the oxidation of the beta-SiC(100)3x2 surface reconstruction. We find that surface oxidation takes place at low molecular oxygen exposures and low temperatures (below 500 degrees C), and results in the formation of SiO2/beta-SiC(100)3x2 interfaces. Si+, Si2+, Si3+ and Si4+ oxidation states are identified together with a mixed oxidation state involving oxygen atoms bonded to both Si and C atoms as SiOC. The latter bonding configuration is found to be located at the interface between the silicon oxide layer and the silicon carbide substrate.

引用

页码：391 / 394

页数：4

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