Analysis of aluminum ion implantation damage into 6H-SiC epilayers

被引：7
|
作者：
Mestres, N
El Mekki, MB
Campos, FJ
Pascual, J
Morvan, E
Godignon, P
Millan, J
Lulli, G
机构：
[1] CSIC, Inst Ciencia Mat, E-08193 Bellaterra, Spain
[2] Autonomous Univ Barcelona, Dept Fis, E-08193 Bellaterra, Spain
[3] CSIC, Ctr Nacl Microelect, E-08193 Bellaterra, Spain
[4] CNR, Inst LAMEL, I-401299 Bologna, Italy
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
ion implantation; simulation; SIMS; RBS; Raman;
D O I：
10.4028/www.scientific.net/MSF.264-268.733
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Aluminium implantation at high energy is a key issue for development of SiC device fabrication technology. The computer simulation as well as an extensive process characterisation are necessary to control and optimise the p-type doping. 6H-SiC samples are implanted with an Al dose of 3e13 cm(-2) at 0.5, 1 and 2 MeV. SIMS, RES and Raman measurements have been performed to characterise impurity profiles and damage levels. The results are corroborated with Monte Carlo simulations.
引用
收藏
页码：733 / 736
页数：4
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