The mechanism of void formation in the growth of 3C-SiC thin film in Si substrate

The effect of growth parameters has been examined for the epitaxial growth of void-free SiC film on Si substrate. Void-free single crystalline SiC films were grown when the Si substrate was heated after the flow of TMS. The increase of TMS flow rate grew void-free SiC films, but the crystallinity of the films varied from single crystalline to polycrystalline with increasing TMS flow rates. The growth of void-free single crystalline SiC films was observed at substrate temperatures below 1000 degrees C. The mechanism of the void formation was briefly discussed in this work.