Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si

被引：28

作者：

Liu, Songtao ^{[1
]}

Norman, Justin C. ^{[2
]}

Jung, Daehwan ^{[3
]}

Kennedy, M. J. ^{[1
]}

Gossard, Arthur C. ^{[1
,2
,3
]}

Bowers, John E. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 04期

关键词：

SILICON; OPERATION;

D O I：

10.1063/1.5043200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical frequency comb direct generation on silicon by mode locked lasers (MLLs) is promising as it offers high wavelength channel counts and ultrashort pulses that will benefit future large-scale high capacity silicon photonic integrated circuits. Here, we demonstrate two-section quantum dot (QD) MLLs that are directly grown on a complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate by employing molecular beam epitaxy. The lasers, incorporating five layers of InAs QDs, operate in the 0-band wavelength range with a pulse repetition rate around 9 GHz. A pulsewidth reduction of 48% of the narrowest achievable pulse from each QD MLL is obtained when the saturable absorber (SA) section length ratio is increased from 8% to 23%. The device with the longest SA section exhibits a more than 50 dB fundamental RF peak signal to noise floor ratio with 1.3 ps pulses. Published by AIP Publishing.

引用

页数：4