Tilt-corrected stitching for electron beam lithography

被引：2

作者：

Thoms, S. ^{[1
]}

Macintyre, D. S. ^{[1
]}

机构：

[1] Univ Glasgow, Nanoelect Res Ctr, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期

关键词：

electron-beam lithography; stitching; tilt;

D O I：

10.1016/j.mee.2007.01.127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates significant improvements in the stitching performance of an electron beam lithography tool by correcting for wafer tilt. This is achieved with no significant increase in writing time. Wafer tilt gives rise to keystone errors in the writing field and even for modest tilts the stitching error can increase significantly. By applying suitable corrections to the main field the maximum stitching error was reduced from 34 to 12 nm for a wafer tilt of 2 mrad. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：793 / 796

页数：4

共 5 条

[1] Minimization of phase errors in long fiber Bragg grating phase masks made using electron beam lithography [J].

Albert, J ;

Theriault, S ;

Bilodeau, F ;

Johnson, DC ;

Hill, KO ;

Sixt, P ;

Rooks, MJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (10) :1334-1336

[2] Stitching-error reduction in gratings by shot-shifted electron-beam lithography [J].

Dougherty, DJ ;

Muller, RE ;

Maker, PD ;

Forouhar, S .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2001, 19 (10) :1527-1531

[3] Long-phase error-free fiber Bragg gratings [J].

Komukai, T ;

Nakazawa, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (05) :687-689

[4] Nanometre scale overlay and stitch metrology using an optical microscope [J].

MacIntyre, D. S. ;

Thoms, S. .

MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) :1051-1054

[5]

OHKI S, 1993, JPN J APPL PHYS 1 B, V12, P5933

← 1 →