Electronic properties of In2O3 surfaces

被引：142

作者：

Klein, A ^{[1
]}

机构：

[1] Darmstadt Univ Technol, Dept Mat & Geosci, Div Surface Sci, D-64287 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期

关键词：

D O I：

10.1063/1.1312199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surfaces of reactively evaporated In2O3 films were investigated in situ by synchrotron-excited photoemission. Work function, valence band maximum, and electronic states in the band gap were determined as a function of oxygen pressure. Surface and bulk electronic properties can only be explained consistently with the assumption of a surface depletion layer. (C) 2000 American Institute of Physics. [S0003-6951(00)01339-5].

引用

页码：2009 / 2011

页数：3

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