A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs

被引：12

作者：

Lime, Francois ^{[1
]}

Avila-Herrera, Fernando ^{[2
]}

Cerdeira, Antonio ^{[2
]}

Iniguez, Benjamin ^{[1
]}

机构：

[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, ETSE, Av Paisos Catalans 26, E-43007 Tarragona, Spain

[2] IPN, CINVESTAV, Dept Ingn Elect, Mexico City, DF, Mexico

来源：

SOLID-STATE ELECTRONICS | 2017年 / 131卷

关键词：

Gate-All-Around; Cylindrical; MOSFET; Junctionless; Drain current; Compact model; Short channel; NANOWIRE TRANSISTORS;

D O I：

10.1016/j.sse.2017.02.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we provide solutions to update a long channel model in order to take into account the short channel effects. The presented model is for the junctionless GAA MOSFETs. The resulting model is analytical, explicit and valid for depletion and accumulation regimes, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：24 / 29

页数：6

共 28 条

[11] Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors [J].

Duarte, Juan P. ;

Choi, Sung-Jin ;

Moon, Dong-Il ;

Choi, Yang-Kyu .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (06) :704-706

[12] A Full-Range Drain Current Model for Double-Gate Junctionless Transistors [J].

Duarte, Juan Pablo ;

Choi, Sung-Jin ;

Choi, Yang-Kyu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) :4219-4225

[13]

Dutta T, 2013, INT CONF ULTI INTEGR, P69, DOI 10.1109/ULIS.2013.6523493

[14] Theory of the Junctionless Nanowire FET [J].

Gnani, Elena ;

Gnudi, Antonio ;

Reggiani, Susanna ;

Baccarani, Giorgio .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) :2903-2910

[15] Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs [J].

Holtij, Thomas ;

Graef, Michael ;

Marie Hain, Franziska ;

Kloes, Alexander ;

Iniguez, Benjamin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (02) :288-299

[16] An improved C-infinity-continuous small-geometry MOSFET modeling for analog applications [J].

Iniguez, B ;

Moreno, EG .

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 1997, 13 (03) :241-259

[17] Performance estimation of junctionless multigate transistors [J].

Lee, Chi-Woo ;

Ferain, Isabelle ;

Afzalian, Aryan ;

Yan, Ran ;

Akhavan, Nima Delidashti ;

Razavi, Pedrarn ;

Colinge, Jean-Pierre .

SOLID-STATE ELECTRONICS, 2010, 54 (02) :97-103

[18] Junctionless multigate field-effect transistor [J].

Lee, Chi-Woo ;

Afzalian, Aryan ;

Akhavan, Nima Dehdashti ;

Yan, Ran ;

Ferain, Isabelle ;

Colinge, Jean-Pierre .

APPLIED PHYSICS LETTERS, 2009, 94 (05)

[19] A quasi-two-dimensional compact drain-current model for undoped symmetric double-gate MOSFETs including short-channel effects [J].

Lime, Francois ;

Iniguez, Benjamin ;

Moldovan, Oana .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (06) :1441-1448

[20] A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics [J].

Lime, Francois ;

Moldovan, Oana ;

Iniguez, Benjamin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (09) :3036-3041

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