A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs

被引：12

作者：

Lime, Francois ^{[1
]}

Avila-Herrera, Fernando ^{[2
]}

Cerdeira, Antonio ^{[2
]}

Iniguez, Benjamin ^{[1
]}

机构：

[1] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, ETSE, Av Paisos Catalans 26, E-43007 Tarragona, Spain

[2] IPN, CINVESTAV, Dept Ingn Elect, Mexico City, DF, Mexico

来源：

SOLID-STATE ELECTRONICS | 2017年 / 131卷

关键词：

Gate-All-Around; Cylindrical; MOSFET; Junctionless; Drain current; Compact model; Short channel; NANOWIRE TRANSISTORS;

D O I：

10.1016/j.sse.2017.02.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we provide solutions to update a long channel model in order to take into account the short channel effects. The presented model is for the junctionless GAA MOSFETs. The resulting model is analytical, explicit and valid for depletion and accumulation regimes, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：24 / 29

页数：6

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