Float-zone and Czochralski crystal growth and diagnostic solar-cell evaluation of a new solar-grade feedstock source

被引：0
|
作者：
Ciszek, TF [1 ]
Page, MR [1 ]
Wang, TH [1 ]
Casey, JA [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词：
D O I：
10.1109/PVSC.2002.1190493
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Czochralski (CZ) and float-zone (FZ) crystals were grown from experimental solar-grade silicon (SoG-Si) feedstock materials developed by Crystal Systems. The materials were metallurgical-grade Si and highly boron-doped p-type electronic-grade Si (EG-Si) reject material, both of which were gaseous melt-treated to remove boron. Crystal growth observations, lifetime and impurity characterization of the grown crystals, and device performance of wafers from them are presented. Devices made directly on treated high-B EG-Si feedstock have a little over half the efficiency of devices made from control CZ samples. However, devices on CZ and FZ crystals grown from the treated high-B EG-Si feedstock have comparable PV performance (14.0% and 13.8% efficiency, respectively) to that of CZ control samples (14.1%).
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页码：210 / 213
页数：4
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