High mobility and excellent electrical stability of MOSFETs using a novel HITAO gate dielectric

被引：0

作者：

Yu, XF ^{[1
]}

Zhu, CX ^{[1
]}

Wang, XP ^{[1
]}

Li, MF ^{[1
]}

Chin, A ^{[1
]}

Du, AY ^{[1
]}

Wang, WD ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, SNDL, Singapore 119260, Singapore

来源：

2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we developed a novel Hf-based gate dielectric for MOSFETs with TAN metal gate. By incorporating Ta into HfO2 films, significant improvements were achieved in contrast to pure HfO2: (1) the dielectric crystallization temperature is increased up to 1000degreesC; (2) interface states density (D-it) is reduced by one order of magnitude; (3) electron peak mobility is enhanced by more than two times; (4) charge trapping and threshold voltage shift is reduced by 20 times, greatly prolonging the device lifetime; (5) negligible sub-threshold swing and G(m) variations under constant voltage stress (CVS).

引用

页码：110 / 111

页数：2

共 7 条

[1] INUMIYA S, 2003, VLSI S, P17
[2] Jung HS, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P853, DOI 10.1109/IEDM.2002.1175971
[3] Koyama M, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P849, DOI 10.1109/IEDM.2002.1175970
[4] Lee JC, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P95
[5] Morioka A., 2003, VLSI S, P165
[6] NABATAME T, 2003, VLSI S, P25
[7] Shanware A, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P939

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