Dynamic saturation in semiconductor optical amplifiers: accurate model, role of carrier density, and slow light

被引：12
作者：
Berger, Perrine [1 ,2 ]
Alouini, Mehdi [1 ,3 ]
Bourderionnet, Jerome [1 ]
Bretenaker, Fabien [2 ]
Dolfi, Daniel [1 ]
机构：
[1] Thales Res & Technol, F-91767 Palaiseau, France
[2] Univ Paris 11, CNRS, Aime Cotton Lab, F-91405 Orsay, France
[3] CNRS, Inst Phys Rennes, UMR 6251, F-35042 Rennes, France
来源：
OPTICS EXPRESS | 2010年 / 18卷 / 02期
关键词：
GAIN;
D O I：
10.1364/OE.18.000685
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We developed an improved model in order to predict the RF behavior and the slow light properties of the SOA valid for any experimental conditions. It takes into account the dynamic saturation of the SOA, which can be fully characterized by a simple measurement, and only relies on material fitting parameters, independent of the optical intensity and the injected current. The present model is validated by showing a good agreement with experiments for small and large modulation indices. (C)2010 Optical Society of America
引用
收藏
页码：685 / 693
页数：9
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