Effect of the formation of SiC whisker on the properties of Al2O3-ZrO2-C materials
被引:5
作者:
Gu, Huazhi
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机构:
Wuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R ChinaWuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R China
Gu, Huazhi
[1
]
Shao, Rongdan
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机构:Wuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R China
Shao, Rongdan
Zhang, Wenjie
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机构:Wuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R China
Zhang, Wenjie
Wang, Houzhi
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机构:Wuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R China
Wang, Houzhi
Yang, Kaibao
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机构:Wuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R China
Yang, Kaibao
Yu, Shuzhong
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机构:Wuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R China
Yu, Shuzhong
机构:
[1] Wuhan Univ Sci & Technol, Hubei Prov Key Lab High Temp Ceram & Refractory, Wuhan 430081, Peoples R China
[2] Maanshan Iron & Steel Grp Corp, Magang Refractory Co Ltd, Maanshan 243000, Peoples R China
来源:
High-Performance Ceramics IV, Pts 1-3
|
2007年
/
336-338卷
关键词:
Al2O3-ZrO2-C material;
SiC whisker;
mechanical strength;
growth mechanism;
D O I:
10.4028/www.scientific.net/KEM.336-338.1263
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
SiC whisker was produced through the reaction between carbon and silicon powders during the sintering of Al2O3-ZrO2-C materials. The thermodynamic conditions and growth mechanism were discussed. The results showed that rod-shaped and dumbbell-shaped SiC whiskers are formed, respectively. The main composition of the beads in dumbbell-shaped whisker is SiOx with a small amount of Na and Ca, but the rods are SiC. In addition, the dumbbell-shaped SiC whisker contributed less than straight rod-shaped SiC whisker to improving the physical properties of Al2O3-ZrO2-C materials.
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页码:1263 / 1265
页数:3
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