ULTRA HIGH REPETITION RATE AND VERY LOW NOISE MODE LOCKED LASERS BASED ON INAS/INP QUANTUM DASH ACTIVE MATERIAL

被引：1

作者：

Akrout, A. ^{[1
]}

Merghem, K. ^{[1
]}

Martinez, A. ^{[1
]}

Tourrenc, J-P. ^{[1
]}

Lafosse, X. ^{[1
]}

Aubin, G. ^{[1
]}

Ramdane, A. ^{[1
]}

Lelarge, F. ^{[2
]}

Le Gouezigou, O. ^{[2
]}

Accard, A. ^{[2
]}

Duan, G-H. ^{[2
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Alcatel Thales III V Lab, F-91460 Marcoussis, France

来源：

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年

关键词：

1.55; MU-M; ROOM-TEMPERATURE; DOT LASERS; JITTER;

D O I：

10.1109/ICIPRM.2009.5012411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimization of novel InAs/InP quantum dash nanostructures has allowed the realization of mode locked lasers that exhibit unprecedented performance, enabling subpicosecond pulse generation at >300 GHz repetition rates and very low timing jitter.

引用

页码：45 / 47

页数：3

共 22 条

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