Topological Switch between Second-Order Topological Insulators and Topological Crystalline Insulators

被引:125
作者
Ezawa, Motohiko [1 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Hongo 7-3-1, Tokyo 1138656, Japan
关键词
Crystalline materials - Topology - Electric insulators - Topological insulators;
D O I
10.1103/PhysRevLett.121.116801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate a topological switch between second-order topological insulators (SOTIs) and topological crystalline insulators (TCIs). Both the SOTI and the TCI are protected by the mirror and inversion symmetries, for which we define the bulk topological numbers of the same type. When an inplane magnetic field is introduced parallel to one of the helical edges, the system becomes a TCI. The conductance along the edge is 1 in the unit of the conductance quantum e(2) / h. When it becomes orthogonal to a diagonal line, two topological corner states emerge on its vertices, and the system becomes a SOTI. This may be used as a basis of a topological circuit-changing switch. Alternatively, the device may be used as a sensor to measure local magnetization on a sample surface with a resolution of 10 nm.
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页数:5
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