A novel high-density low-cost Diode Programmable Read Only Memory

被引：9
|
作者：
deGraaf, C
Woerlee, PH
Hart, CM
Lifka, H
deVreede, PWH
Janssen, PJM
Sluijs, FJ
Paulzen, GM
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/IEDM.1996.553151
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM circuits is demonstrated and the program, read and reliability characteristics are discussed.
引用
收藏
页码：189 / 192
页数：4
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