Anisotropic Pattern Transfer in Ultrananocrystalline Diamond Films by Inductively Coupled Plasma Etching

被引：2

作者：

Park, Jong Cheon ^{[1
]}

Kim, Seong Hak ^{[2
]}

Cha, Seung Uk ^{[2
]}

Jeong, Ok Geun ^{[1
]}

Kim, Tae Gyu ^{[2
]}

Kim, Jin Kon ^{[2
]}

Cho, Hyun ^{[2
]}

机构：

[1] Pusan Natl Univ, Dept Nano Fus Technol, Gyeongnam 627706, South Korea

[2] Pusan Natl Univ, Dept Nanomechatron Engn, Gyeongnam 627706, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

Anisotropic Pattern Transfer; Ultrananocrystalline Diamond; Dry Etching; Inductively Coupled Plasmas; CVD DIAMOND; MEMS; MICROSTRUCTURES;

D O I：

10.1166/jnn.2014.10102

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High density plasma etching of ultrananocrystalline diamond (UNCD) films was performed in O-2 and O-2/Ar inductively coupled plasma (ICP) discharges. The O-2/Ar ICP discharges produced higher etch rates due to enhanced physical component of the etching, and a maximum etch rate of similar to 280 nnn/min was obtained in 10 sccm O-2/5 sccm Ar discharges. Very high etch selectivities up to similar to 140:1 were obtained for the UNCD over Al mask layer. Anisotropic pattern transfer with a vertical sidewall profile was achieved in the 10 scorn O-2/5 scorn Ar discharges at a relatively low source power (300 W) and a moderate rf chuck power (200 W).

引用

页码：9078 / 9081

页数：4

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