Convective phenomena in large melts including magnetic fields

被引：49
作者：
Muiznieks, A.
Krauze, A.
Nacke, B.
机构：
[1] Latvian State Univ, Fac Math & Phys, LV-1002 Riga, Latvia
[2] Inst Phys, Salaspils, Latvia
[3] Inst Electrothermal Proc, Hannover, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 303卷 / 01期
关键词：
computer simulation; fluid flows; stirring; magnetic field assisted Czochralski method; semiconducting silicon;
D O I：
10.1016/j.jcrysgro.2006.12.051
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The set of characteristic parameters which describe modern large industrial CZ silicon single crystal growth systems is introduced. The main melt flow driving mechanisms are considered, and the characteristic density values of various in the melt acting forces are estimated. The analysis is illustrated with examples of numerical simulation and comparisons with experiments. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：211 / 220
页数：10
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