The preparation of ITO films via a chemical solution deposition process

被引：12
|
作者：
Tsai, MS [1 ]
Wang, CL
Hon, MH
机构：
[1] So Taiwan Univ Technol, Dept Chem Engn, Tainan, Taiwan
[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
来源：
SURFACE & COATINGS TECHNOLOGY | 2003年 / 172卷 / 01期
关键词：
indium-tin-oxide films; indium nitrate; active carbon; chemical solution deposition;
D O I：
10.1016/S0257-8972(03)00314-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Indium-tin-oxide (ITO) films were deposited on substrates of soda lime glass via a dipping coating process from a mixed ethanolic solution of indium nitrate and tin chloride. The conductivity of the ITO films were improved by adding in the bath of active carbon to create a reducing atmosphere during heating. Under such an active carbon process, the optimum conditions of heat-treatment such as atmosphere, soaking temperature and Sn/In ratio for low sheet resistance of ITO film was investigated. The best sheet resistance of ITO films made from this process was 248+/-28 Omega/rectangle with Sn/In ratio of 0.08 which was heat-treated at 550 degreesC for 1 h in vacuum with active carbon. The optical transmittance of the films in the range of 400-800 nm was 80-90%. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：95 / 101
页数：7
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