The preparation of ITO films via a chemical solution deposition process

被引：12

作者：

Tsai, MS ^{[1
]}

Wang, CL

Hon, MH

机构：

[1] So Taiwan Univ Technol, Dept Chem Engn, Tainan, Taiwan

[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2003年 / 172卷 / 01期

关键词：

indium-tin-oxide films; indium nitrate; active carbon; chemical solution deposition;

D O I：

10.1016/S0257-8972(03)00314-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium-tin-oxide (ITO) films were deposited on substrates of soda lime glass via a dipping coating process from a mixed ethanolic solution of indium nitrate and tin chloride. The conductivity of the ITO films were improved by adding in the bath of active carbon to create a reducing atmosphere during heating. Under such an active carbon process, the optimum conditions of heat-treatment such as atmosphere, soaking temperature and Sn/In ratio for low sheet resistance of ITO film was investigated. The best sheet resistance of ITO films made from this process was 248+/-28 Omega/rectangle with Sn/In ratio of 0.08 which was heat-treated at 550 degreesC for 1 h in vacuum with active carbon. The optical transmittance of the films in the range of 400-800 nm was 80-90%. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：95 / 101

页数：7

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