Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD

被引：11

作者：

Lumbantoruan, Franky ^{[1
]}

Zheng, Xia-Xi ^{[1
]}

Huang, Jian-Hao ^{[1
]}

Huang, Ren-Yao ^{[1
]}

Mangasa, Firman ^{[1
,4
]}

Chang, Edward-Yi ^{[1
,2
]}

Tu, Yung-Yi ^{[1
]}

Lee, Ching-Ting ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

[3] Yuan Ze Univ, Dept Photon Engn, Taoyuan 32003, Taiwan

[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9800812, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2018年 / 501卷

关键词：

Characterization; Surface structure; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; High electron mobility transistors; VAPOR-PHASE EPITAXY; LATTICE; INALN; ALGAN/GAN; SURFACE;

D O I：

10.1016/j.jcrysgro.2018.08.015

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the effects of the growth temperature on the structural and electrical properties of the InAlGaN/GaN heterostructures grown on c-plane sapphire substrates. X-ray Photoelectron Spectroscopy and Atomic Force Microscopy measurements results indicate that the InAlGaN layer properties is strongly dependent on the growth temperature. It is observed that the Gallium incorporation increases with the increase of the growth temperature. Meanwhile, the surface roughness decreases from 0.49 nm to 0.34 nm with the increase of growth temperature. The variation of structural properties, composition and surface morphology influences the transport properties of the InAlGaN/GaN heterostructures. High 2DEG electron density, low sheet resistance and good C-V response with a steep slope for InAlGaN/GaN HEMT were achieved at an optimized growth temperature window between 900 degrees C and 950 degrees C.

引用

页码：7 / 12

页数：6

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