Fabrication Process of Carbon Nanotube Field Effect Transistors Using Atomic Layer Deposition Passivation for Biosensors

被引：11

作者：

Nakashima, Yasuhiro ^{[1
]}

Ohno, Yutaka ^{[1
]}

Kishimoto, Shigeru ^{[1
,2
]}

Okochi, Mina ^{[3
]}

Honda, Hiroyuki ^{[3
]}

Mizutani, Takashi ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Dept Chem Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2010年 / 10卷 / 06期

关键词：

Carbon Nanotube; CNT-FET; Atomic Layer Deposition; ALD; HfO2; Biosensor;

D O I：

10.1166/jnn.2010.1983

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si3N4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs.

引用

页码：3805 / 3809

页数：5

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