Structure of Friction-transferred Highly Oriented Poly(3-hexylthiophene) Thin Films

被引:16
作者
Chai, Li-guo [1 ]
Zhou, Hai-xin [1 ]
Sun, Xiao-li [1 ]
Li, Hui-hui [1 ]
Yan, Shou-ke [1 ]
Yang, Xiao-qiu [2 ]
机构
[1] Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing, Peoples R China
[2] MOST, Basic Res Serv, Beijing 100862, Peoples R China
基金
中国国家自然科学基金;
关键词
Poly(3-hexylthiophene); Friction-transfer; Thin film; Orientation; FIELD-EFFECT MOBILITY; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); MOLECULAR-WEIGHT; EPITAXIAL CRYSTALLIZATION; CHARGE-TRANSPORT; TRANSISTORS; POLYMERS; MICROSTRUCTURE; POLYETHYLENE; ORIENTATION;
D O I
10.1007/s10118-016-1770-z
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Oriented thin films of P3HT were obtained by a friction-transfer technique. The morphology and structure of the film were studied by means of optical microscopy, atomic force microscopy and transmission electron microscopy. Optical microscopy observation indicates that large size well-ordered P3HT thin films can be produced by a friction-transfer technique. Highly ordered lamellae were observed in P3HT friction-transferred films by electron microscopy. Electron diffraction results confirm the existence of high orientation with the a- and c-axes of P3HT crystals aligned in the film plane while the c-axis parallel to the friction-transfer direction. The atomic force microscopy observation of the as-prepared P3HT thin film shows, however, a featureless top surface morphology, indicating the structure inhomogeneity of the obtained film. To get highly oriented P3HT thin films with homogenous structure, high temperature annealing, solvent vapor annealing and self-seeding recrystallization of the friction-transferred film were performed. It is confirmed that solvent vapor annealing and self-seeding recrystallization methods are efficient in improving the surface morphology and structure of the friction transferred P3HT thin film. Highly oriented P3HT films with unique structure can be obtained through friction-transfer with subsequent solvent vapor annealing and self-seeding recrystallization.
引用
收藏
页码:513 / 522
页数:10
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