Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air

被引：251

作者：

Hoshikawa, K. ^{[1
]}

Ohba, E. ^{[2
]}

Kobayashi, T. ^{[2
]}

Yanagisawa, J. ^{[2
]}

Miyagawa, C. ^{[2
]}

Nakamura, Y. ^{[2
]}

机构：

[1] Shinshu Univ, Fac Engn, 500 Wakasato, Nagano 380, Japan

[2] Fujikoshi Machinery Corp, Nagano, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 447卷

关键词：

Bridgman technique; Growth from melt; Single crystal growth; Oxides; Semiconducting gallium compounds; CONDUCTIVITY; EDGE;

D O I：

10.1016/j.jcrysgro.2016.04.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：36 / 41

页数：6

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