Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

被引：27

作者：

Chu, Tian-Jian ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Chang, Ting-Chang ^{[2
]}

Chang, Kuan-Chang ^{[1
]}

Pan, Chih-Hung ^{[1
]}

Chen, Kai-Huang ^{[3
]}

Chen, Jung-Hui ^{[4
]}

Chen, Hsin-Lu ^{[5
]}

Huang, Hui-Chun ^{[1
]}

Shih, Chih-Cheng ^{[1
]}

Syu, Yong-En ^{[2
]}

Zheng, Jin-Cheng ^{[6
]}

Sze, Simon M. ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[3] Tung Fang Design Inst, Dept Elect Engn & Comp Sci, Kaohsiung 82941, Taiwan

[4] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 82446, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 80424, Taiwan

[6] Xiamen Univ, Dept Phys, Xiamen 361005, Fujian, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 22期

关键词：

HOPPING CONDUCTION; HIGH-PERFORMANCE; OXIDE; HYDROGEN; RRAM; IMPROVEMENT; ORIGIN; RERAM;

D O I：

10.1063/1.4902503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study presents the dual bipolar resistive switching characteristics induced by oxygen-ion accumulation. By introducing nitrogen to the interface between the resistive switching region and active switching electrode, filament-type and interface-type resistive switching behaviors can both exist under different operation conditions. This particular oxygen-ion accumulation-induced switching behavior suggests an extraordinary potential for resistive random access memory applications because the operating power can be significantly decreased (about 100 times). The physical mechanism of this oxygen-ion accumulation-induced interface-type resistive switching behavior is explained by our model and clarified by current conduction mechanism and material analysis. (C) 2014 AIP Publishing LLC.

引用

页数：4

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