Improvement of Y2O3/Si interface for FeRAM application

被引：16

作者：

Ito, D ^{[1
]}

Yoshimura, T ^{[1
]}

Fujimura, N ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Coll Engn, Dept Appl Mat Sci, Sakai, Osaka 5998531, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 159卷 / 159期

关键词：

Xe gas; substrate cleaning; C-V characteristics; I-V characteristics; Y2O3/Si interface; FeRAM application;

D O I：

10.1016/S0169-4332(00)00085-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We attempted to improve the dielectric properties of sputter deposited Y2O3 thin film on Si for the buffer layer of Ferroelectric Random Access Memory (FeRAM) application. Although the use of Xe as a sputtering gas was effective to improve the crystallinity of Y2O3 film On Si compared to that of the film deposited using Ar gas, oxygen deficiency in the film was enhanced by use of Xe gas. Increasing the total sputtering gas pressure was effective for improving the oxygen deficiency. The Y2O3 film sputtered at the total gas pressure of 20 mTorr has little positive charges and shows excellent dielectric properties as insulator. Effect of the substrate cleaning was also studied for decreasing the interface state density and the shift of flat band voltage. (C) 2000 Published by Elsevier Science B.V.

引用

页码：138 / 142

页数：5

共 13 条

[1] Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices
Fujimura, N
Azuma, S
Aoki, N
Yoshimura, T
Ito, T
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) : 7084 - 7088
[2] HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SILICON
FUKUMOTO, H
IMURA, T
OSAKA, Y
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (04) : 360 - 361
[3] FORMATION OF METAL/FERROELECTRIC/INSULATOR/SEMICONDUCTOR STRUCTURE WITH A CEO2 BUFFER LAYER
HIRAI, T
TERAMOTO, K
NISHI, T
GOTO, T
TARUI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5219 - 5222
[4] Preparation of Bi4Ti3O12 thin film on Si(100) substrate using Bi2SiO5 buffer layer and its electric characterization
Kijima, T
Matsunaga, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B): : 5171 - 5173
[5] Moll J., 1963, IEEE Trans. Electron Devices, V10, P338, DOI DOI 10.1109/T-ED.1963.15245
[6] Preparation and basic properties of SrBi2Ta2O9 films
Oishi, Y
Matsumuro, Y
Okuyama, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B): : 5896 - 5899
[7] Preparation and characterization of PZT thin films on CeO2(111)/Si(111) structures
Sakai, I
Tokumitu, E
Ishiwara, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B): : 4987 - 4990
[8] FERROELECTRIC MEMORIES
SCOTT, JF
DEARAUJO, CAP
[J]. SCIENCE, 1989, 246 (4936) : 1400 - 1405
[9] INTERACTION OF PBTIO3 FILMS WITH SI SUBSTRATE
SHICHI, Y
TANIMOTO, S
GOTO, T
KUROIWA, K
TARUI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B): : 5172 - 5177
[10] FERROELECTRIC FIELD-EFFECT MEMORY DEVICE USING BI4TI3O12 FILM
SUGIBUCHI, K
KUROGI, Y
ENDO, N
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2877 - 2881

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