Simultaneous measurement of electron and hole mobilities in polymer light-emitting diodes

被引：188
作者：
Martens, HCF
Huiberts, JN
Blom, PWM
机构：
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[3] Univ Groningen, Ctr Mat Sci, NL-9747 AG Groningen, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 12期
关键词：
D O I：
10.1063/1.1311599
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport properties of electrons and holes in a poly(p-phenylene vinylene)-based polymer light-emitting diode (PLED) have been investigated. Using admittance spectroscopy, we are able to simultaneously obtain the electron and hole mobility, mu=mu(0) exp(gamma root E), in a single PLED. The dynamics of the electron and hole transport are separated in the frequency domain as a result of the different transit times. At room temperature, we find mu(0)=5.6x10(-11) m(2)/V s and gamma=5.0x10(-4) (m/V)(1/2) for holes. For electrons mu(0)=1.0x10(-12) m(2)/V s and gamma=8.0x10(-4) (m/V)(1/2) are obtained. (C) 2000 American Institute of Physics. [S0003-6951(00)03538-5].
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页码：1852 / 1854
页数：3
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