Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers

被引：25

作者：

Kawakami, Y.

Shen, X. Q.

Piao, G.

Shimizu, M.

Nakanishi, H.

Okumura, H.

机构：

[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058561, Japan

[2] Tokyo Univ Sci, Noda, Chiba 2788510, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 01期

关键词：

surface structure; molecular beam epitaxy; superlattice; nitride;

D O I：

10.1016/j.jcrysgro.2006.11.031

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth and characterization results of AlGaN/GaN heterostructures using quasi AlGaN as a barrier layer, which is formed by AlN/GaN super-lattice., It is found that the surface morphology of the heterostructure is greatly improved, where monolayer steps on the surface are clearly observed. Simultaneously, electric properties in such structured are superior to those using the conventional alloy AlGaN caplayers. Low sheet resistance (less than 200 ohm/rectangle) is obtained from our samples with high Al composition (> 40%) in average, which shows the great merit of our growth method to the conventional technique. It is expected that the technique can be applied to the high power and high frequency device applications. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：168 / 171

页数：4

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