Model experiments on fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films

被引：39

作者：

Du, XF ^{[1
]}

Chen, IW ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With an n-type or p-type semiconductor as a top electrode in contact with ferroelectric Pb(Zr0.53Ti0.47)O-3 thin film, polarization fatigue has been studied to investigate the effect of charge carrier injection. Electron injection is shown to be con-elated with fatigue while hole injection is not. Current blocking by an insulating SiO2 layer prevents fatigue as well. The enhanced mobility of oxygen vacancies, partially de-ionized by association with the injected electrons, is proposed to be the mechanism for the electron effect. (C) 1998 American Institute of Physics.

引用

页码：1923 / 1925

页数：3

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