Amorphous-fcc transition in Ge2Sb2Te5

被引：17

作者：

Lombardo, S. ^{[1
]}

Rimini, E. ^{[2
]}

Grimaldi, M. G. ^{[2
]}

Privitera, S. ^{[3
]}

机构：

[1] CNR IMM, I-95121 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] STMicroetectronics, I-95121 Catania, Italy

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 03期

关键词：

Phase change memories; Chalcogenides; GST; Phase transitions; CRYSTAL NUCLEATION; THIN-FILMS; CRYSTALLIZATION; MICROSCOPY;

D O I：

10.1016/j.mee.2009.09.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we discuss some major aspects on the physics of the phase transition from the amorphous to the face-centered-cubic (fcc) polycrystal in Ge2Sb2Te5 at low temperature. We follow the phase transformation by using structural techniques such as TEM, XRD. and electrical resistivity measurements by using the 4-point-probe technique. The results are interpreted in the framework of a quantitative model. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：294 / 300

页数：7

共 32 条

[1]

ADLER D, 1978, REV MOD PHYS

[2]

AHN SJ, 2004, IEEE IEDM

[3]

Becker R, 1935, ANN PHYS-BERLIN, V24, P719

[4]

CHEN YC, 2006, IEEE IEDM