Control of growth orientation and shape for epitaxially grown In2O3 nanowires on a-plane sapphire

被引：16

作者：

Chen, Ching-Jong ^{[1
]}

Chern, Ming-Yau ^{[1
]}

Wu, Chien-Ting ^{[2
]}

Chen, Cheng-Hsuan ^{[3
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

来源：

MATERIALS RESEARCH BULLETIN | 2010年 / 45卷 / 02期

关键词：

Nanostructures; Electron microscopy; X-ray diffraction; Crystal structure; OXIDE NANOWIRE;

D O I：

10.1016/j.materresbull.2009.08.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertically aligned indium oxide nanowires were grown on a-plane sapphire substrate by the method of catalyst-assisted carbothermal reduction. The morphology and crystal structure of the nanowires are determined by X-ray diffraction, transmission electron microscopy and field-emission scanning electron microscopy. Two types of In2O3 nanowires were found by controlling the growth conditions. The nanowires with a hexagonal cross-section were shown to grow in [111] direction, whereas those with a square cross-section grow in [001] direction. In addition to the temperature effects, the concept of supersaturation in Au catalyst is proposed to explain the formation of these two types of nanowires. Besides, tapering, which is explained with the interplay between the vapor-liquid-solid and vapor-solid growth mechanisms, is observed in the nanowires. (C) 2009 Published by Elsevier Ltd.

引用

页码：230 / 234

页数：5

共 24 条

[1] Germanium nanowire epitaxy: Shape and orientation control [J].