Schottky nanocontacts on ZnO nanorod arrays

被引：355
作者：
Park, WI
Yi, GC [1 ]
Kim, JW
Park, SM
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyoungbuk, South Korea
[2] Pohang Univ Sci & Technol, Dept Chem, Pohang 790784, Kyoungbuk, South Korea
[3] Pohang Univ Sci & Technol, Ctr Integrated Mol Syst, Pohang 790784, Kyoungbuk, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 24期
关键词：
D O I：
10.1063/1.1584089
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on fabrication and electrical characteristics of ZnO nanorod Schottky diode arrays. High quality ZnO nanorods were grown for the fabrication of the Schottky diodes using noncatalytic metalorganic vapor phase epitaxy and Au was evaporated on the tips of the vertically well-aligned ZnO nanorods. I-V characteristics of both bare ZnO and Au/ZnO heterostructure nanorod arrays were measured using current-sensing atomic force microscopy. Although both nanorods exhibited nonlinear and asymmetric I-V characteristic curves, Au/ZnO heterostructure nanorods demonstrated much improved electrical characteristics: the reverse-bias breakdown voltage was improved from -3 to -8 V by capping a Au layer on the nanorod tips. The origin of the enhanced electrical characteristics for the heterostructure nanorods is suggested. (C) 2003 American Institute of Physics.
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页码：4358 / 4360
页数：3
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