Extraction of small-signal model parameters of silicon mosfet for RF applications

被引：0

作者：

Goswami, A ^{[1
]}

Agrawal, A ^{[1
]}

Gupta, M ^{[1
]}

Gupta, RS ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2000年 / 27卷 / 05期

关键词：

modeling; MOSFET; admittance parameter; RF; small-signal equivalent circuit; gains;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An efficient, direct method to extract the admittance parameters and an accurate small-signal equivalent circuit model of an MOS transistor for RF applications have been developed, incorporating the effect of the channel-length modulation. The Y-parameter expressions are developed in terms of MOSFET parameters, parasitic elements, frequency and bias conditions. Further, the scattering parameters and differ ent gains for an Si-MOSFET have been evaluated to show its RF behavior. The results obtained are compared with experimental data, and are in good agreement. (C) 2000 John Wiley Be Sons, Inc.

引用

页码：352 / 358

页数：7

共 16 条

[1] ALLAM EA, 1997, IEEE T COMPUT AID D, V16, P437
[2] Biber CE, 1997, IEEE MTT-S, P865, DOI 10.1109/MWSYM.1997.602936
[3] CAMILLERI N, 1993, IEEE MTT-S, P545, DOI 10.1109/MWSYM.1993.276880
[4] Cheng Y., 1997, UCBERLM972
[5] COLLANTES JM, 1995, IEEE MTT-S, P1553, DOI 10.1109/MWSYM.1995.406271
[6] Goswami A, 2000, MICROW OPT TECHN LET, V24, P341, DOI 10.1002/(SICI)1098-2760(20000305)24:5<341::AID-MOP16>3.0.CO
[7] 2-5
[8] Goswami A, 2000, MICROW OPT TECHN LET, V25, P346, DOI 10.1002/(SICI)1098-2760(20000605)25:5<346::AID-MOP16>3.0.CO
[9] 2-R
[10] Ho MC, 1997, IEEE MTT-S, P391, DOI 10.1109/MWSYM.1997.602816

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