The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics

被引：36
作者：
Kavasoglu, A. Sertap [1 ,2 ]
Yakuphanoglu, Fahrettin [3 ]
Kavasoglu, Nese [1 ,2 ]
Pakma, Osman [1 ,2 ]
Birgi, Ozcan [1 ,2 ]
Oktik, Sener [1 ,2 ]
机构：
[1] Mugla Univ, Fac Arts & Sci, Dept Phys, TR-48170 Kotekli, Mugla, Turkey
[2] Mugla Univ, Clean Energy Res & Dev Ctr, TR-48170 Kotekli, Mugla, Turkey
[3] Firat Univ, Dept Phys, TR-23119 Elazig, Turkey
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 492卷 / 1-2期
关键词：
Schottky diodes; I-V characteristics; Ideality factor; Series resistance; Barrier height; MEH-PPV; Heterojunction diode; TUNNELING-ENHANCED RECOMBINATION; HETEROJUNCTION SOLAR-CELLS; SCHOTTKY-BARRIER DIODES; CURRENT-VOLTAGE; CAPACITANCE-VOLTAGE; TEMPERATURE-DEPENDENCE; ELECTRONIC-PROPERTIES; ELECTRICAL CHARACTERIZATION; HEIGHT; INHOMOGENEITIES;
D O I：
10.1016/j.jallcom.2009.11.128
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald. (C) 2009 Elsevier B.V. All rights reserved.
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收藏
页码：421 / 426
页数：6
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