Intraband relaxation via polaron decay in InAs self-assembled quantum dots

被引:93
作者
Zibik, EA
Wilson, LR
Green, RP
Bastard, G
Ferreira, R
Phillips, PJ
Carder, DA
Wells, JPR
Cockburn, JW
Skolnick, MS
Steer, MJ
Hopkinson, M
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Lab Pierre Aigrain, F-75005 Paris, France
[3] EURATOM, FOM, Inst Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[4] EPSRC, Natl Ctr 3 5 Technol, Sheffield S1 3JD, S Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevB.70.161305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three distinct channels for the decay of polarons in InAs quantum dots are identified using energy and temperature-dependent far-infrared pump-probe spectroscopy. For energies up to similar to53 meV a monotonic increase of the polaron relaxation time is observed, the polaron decay being shown to occur into two longitudinal acoustic phonons. Above this energy additional decay channels into two optical phonons are allowed, leading to the observed reduction of the decay time. We also demonstrate interlevel polaron transfer between the closely spaced p-like excited states, with measured transfer times in good agreement with calculations for an acoustic-phonon-mediated process.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 50 条
[31]   Energy dependent carrier relaxation in self-assembled InAs/GaAs quantum dots [J].
Ling, H. S. ;
Lee, C. P. ;
Wang, S. Y. ;
Lo, M. C. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09) :2709-+
[32]   Energy-dependent carrier relaxation in self-assembled InAs quantum dots [J].
Ling, H.S. ;
Lee, C.P. ;
Lo, M.C. .
Journal of Applied Physics, 2008, 103 (12)
[33]   Intersublevel polaron dephasing in self-assembled quantum dots [J].
Zibik, E. A. ;
Grange, T. ;
Carpenter, B. A. ;
Ferreira, R. ;
Bastard, G. ;
Vinh, N. Q. ;
Phillips, P. J. ;
Steer, M. J. ;
Hopkinson, M. ;
Cockburn, J. W. ;
Skolnick, M. S. ;
Wilson, L. R. .
PHYSICAL REVIEW B, 2008, 77 (04)
[34]   Intraband absorption in Ge/Si self-assembled quantum dots [J].
Boucaud, P ;
Le Thanh, V ;
Sauvage, S ;
Débarre, D ;
Bouchier, D .
APPLIED PHYSICS LETTERS, 1999, 74 (03) :401-403
[35]   Intraband absorption in Ge/Si self-assembled quantum dots [J].
Boucaud, P ;
Le Thanh, V ;
Sauvage, S ;
Brunhes, T ;
Fortuna, F ;
Debarre, D ;
Bouchier, D .
SEMICONDUCTOR QUANTUM DOTS, 2000, 571 :9-14
[36]   Intraband absorption in Ge/Si self-assembled quantum dots [J].
Boucaud, P. ;
Le Thanh, V. ;
Sauvage, S. ;
Brunhes, T. ;
Fortuna, F. ;
Debarre, D. ;
Bouchier, D. .
Materials Research Society Symposium - Proceedings, 2000, 571 :9-14
[37]   The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers [J].
Shu, G. W. ;
Wang, C. K. ;
Wang, J. S. ;
Shen, J. L. ;
Hsiao, R. S. ;
Chou, W. C. ;
Chen, J. F. ;
Lin, T. Y. ;
Ko, C. H. ;
Lai, C. M. .
NANOTECHNOLOGY, 2006, 17 (23) :5722-5725
[39]   Hole levels in InAs self-assembled quantum dots [J].
Blokland, J. H. ;
Wijnen, F. J. P. ;
Christianen, P. C. M. ;
Zeitler, U. ;
Maan, J. C. .
PHYSICAL REVIEW B, 2007, 75 (23)
[40]   Auger processes in InAs self-assembled quantum dots [J].
Paskov, PP ;
Holtz, PO ;
Wongmanerod, S ;
Monemar, B ;
Garcia, JM ;
Schoenfeld, WV ;
Petroff, PM .
PHYSICA E, 2000, 6 (1-4) :440-443