Intraband relaxation via polaron decay in InAs self-assembled quantum dots

被引:93
作者
Zibik, EA
Wilson, LR
Green, RP
Bastard, G
Ferreira, R
Phillips, PJ
Carder, DA
Wells, JPR
Cockburn, JW
Skolnick, MS
Steer, MJ
Hopkinson, M
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Lab Pierre Aigrain, F-75005 Paris, France
[3] EURATOM, FOM, Inst Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[4] EPSRC, Natl Ctr 3 5 Technol, Sheffield S1 3JD, S Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevB.70.161305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three distinct channels for the decay of polarons in InAs quantum dots are identified using energy and temperature-dependent far-infrared pump-probe spectroscopy. For energies up to similar to53 meV a monotonic increase of the polaron relaxation time is observed, the polaron decay being shown to occur into two longitudinal acoustic phonons. Above this energy additional decay channels into two optical phonons are allowed, leading to the observed reduction of the decay time. We also demonstrate interlevel polaron transfer between the closely spaced p-like excited states, with measured transfer times in good agreement with calculations for an acoustic-phonon-mediated process.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 50 条
  • [21] Saturation of intraband absorption and electron relaxation time in n-doped InAs/GaAs self-assembled quantum dots
    Sauvage, S
    Boucaud, P
    Glotin, F
    Prazeres, R
    Ortega, JM
    Lemaître, A
    Gérard, JM
    Thierry-Flieg, V
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (26) : 3818 - 3820
  • [22] Carrier relaxation and electronic structure in InAs self-assembled quantum dots
    Schmidt, KH
    MedeirosRibeiro, G
    Oestreich, M
    Petroff, PM
    Dohler, GH
    [J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11346 - 11353
  • [23] Intraband absorption spectroscopy of self-assembled quantum dots
    Boucaud, P
    Sauvage, S
    Julien, FH
    Gérard, JM
    Thierry-Mieg, V
    [J]. INTERSUBBAND TRANSITIONS IN QUANTUM WELLS: PHYSICS AND DEVICES, 1998, : 141 - 146
  • [24] Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots
    Gong, Ming
    Duan, Kaimin
    Li, Chuan-Feng
    Magri, Rita
    Narvaez, Gustavo A.
    He, Lixin
    [J]. PHYSICAL REVIEW B, 2008, 77 (04)
  • [25] Singlet and triplet polaron relaxation in doubly charged self-assembled quantum dots
    Grange, T.
    Zibik, E. A.
    Ferreira, R.
    Bastard, G.
    Carpenter, B. A.
    Phillips, P. J.
    Stehr, D.
    Winnerl, S.
    Helm, M.
    Steer, M. J.
    Hopkinson, M.
    Cockburn, J. W.
    Skolnick, M. S.
    Wilson, L. R.
    [J]. NEW JOURNAL OF PHYSICS, 2007, 9
  • [26] Tuning of intraband absorption and photoresponse in self-assembled InAs/GaAs quantum dots by thermal annealing
    Ng, W. H.
    Zibik, E. A.
    Wilson, L. R.
    Skolnick, M. S.
    Cockburn, J. W.
    Steer, M. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
  • [27] Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots
    Chen, ZH
    Kim, ET
    Madhukar, A
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2770 - 2772
  • [28] Cracking self-assembled InAs quantum dots
    D.M. Bruls
    J.W.A.M. Vugs
    P.M. Koenraad
    M.S. Skolnick
    M. Hopkinson
    J.H. Wolter
    [J]. Applied Physics A, 2001, 72 : S205 - S207
  • [29] Cracking self-assembled InAs quantum dots
    Bruls, D. M.
    Vugs, J. W. A. M.
    Koenraad, P. M.
    Skolnick, M. S.
    Hopkinson, M.
    Wolter, J. H.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (Suppl 2): : S205 - S207
  • [30] Energy-dependent carrier relaxation in self-assembled InAs quantum dots
    Ling, H. S.
    Lee, C. P.
    Lo, M. C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)