Influence of oxygen treatment on transport properties of PbTe:In polycrystalline films

被引：13

作者：

Dashevsky, Z. ^{[1
]}

Shufer, E. ^{[1
]}

Kasiyan, V. ^{[1
]}

Flitsiyan, E. ^{[2
]}

Chernyak, L. ^{[2
]}

机构：

[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel

[2] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 10期

关键词：

Lead telluride films; Oxygen treatment; Photosensitivity; PBS-TYPE FILMS; PHYSICAL-PROPERTIES; CONDUCTIVITY; OXIDATION; DIFFUSION;

D O I：

10.1016/j.physb.2010.02.048

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, the oxygen treatment of 1 mu m thick n-type PbTe:In films was studied. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. The inversion of the type of electrical conductivity in PbTe:In films from n- to p-type was observed after the thermal treatment in oxygen (T-a = 400 degrees C). This effect is related to indium segregation at the film surface. The photoconductivity demonstrated in PbTe:In films after oxygen treatment is due to oxygen diffusion along the grain boundaries and the creation of potential relief, which separates electron-hole pairs at the boundaries under light illumination. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2380 / 2384

页数：5

共 15 条

[1]

Balandin A.A., 2006, HDB SEMICONDUCTOR NA

[2] Physical properties and inversion of conductivity type in nanocrystalline PbTe films [J].

Dashevsky, Z ;

Kreizman, R ;

Dariel, MP .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (09)

[3] Thermoelectric efficiency in graded indium-doped PbTe crystals [J].

Dashevsky, Z ;

Shusterman, S ;

Dariel, MP ;

Drabkin, I .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) :1425-1430

[4] Influence of potential barriers on the thermoelectric properties of PbTe thin films [J].

Dashevsky, Z .

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1997, :255-258

[5] Determination of the oxygen diffusion profile in polycrystalline lead selenide layers using nuclear microanalysis [J].

Gamarts, AE ;

Lebedev, VM ;

Moshnikov, VA ;

Chesnokova, DB .

SEMICONDUCTORS, 2004, 38 (10) :1160-1163

[6] Doping effect on the kinetics and mechanism of thermal oxidation of polycrystalline PbSe layers [J].

Golubchenko, N. V. ;

Moshnikov, V. A. ;

Chesnokova, D. B. .

INORGANIC MATERIALS, 2006, 42 (09) :942-950

[7] PbSe photodetector arrays for IR sensors [J].

Munoz, A ;

Melendez, J ;

Torquemada, MC ;

Rodrigo, MT ;

Cebrian, J ;

de Castro, AJ ;

Meneses, J ;

Ugarte, M ;

Lopez, F ;

Vergara, G ;

Hernandez, JL ;

Martin, JM ;

Adell, L ;

Montojo, MT .

THIN SOLID FILMS, 1998, 317 (1-2) :425-428

[8]

NEUSTROEV LN, 1986, SOV PHYS SEMICOND+, V20, P34

[9]

NEUSTROEV LN, 1986, SOV PHYS SEMICOND+, V20, P38

[10] Effect of oxidation on the thermoelectric properties of PbTe and PbS epitaxial films [J].

Rogacheva, EI ;

Krivulkin, IM ;

Nashchekina, ON ;

Sipatov, AY ;

Volobuev, VV ;

Dresselhaus, MS .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1661-1663

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