Investigation of the Details of Silicon Nanowhisker Growth by Monte Carlo Simulation

被引：0
作者：
Nastovjak, Alla G. [1 ]
Neizvestny, Igor G. [1 ]
Shwartz, Nataliya L. [1 ]
机构：
[1] RAS, SB, Inst Semicond Phys, Novosibirsk, Russia
来源：
2009 INTERNATIONAL SCHOOL AND SEMINAR ON MODERN PROBLEMS OF NANOELECTRONICS, MICRO- AND NANOSYSTEM TECHNOLOGIES | 2009年
关键词：
Nanowhisker; Monte Carlo; simulation;
D O I：
10.1109/INTERNANO.2009.5335639
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R-2 for diffusion growth mode and radius independent for adsorption mode.
引用
收藏
页码：47 / 49
页数：3
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