Application of a ZnO UV sensor for a scintillation-type radiation detector

被引：10

作者：

Abe, T. ^{[1
]}

Suzuki, Y. ^{[1
]}

Nakagawa, A. ^{[1
]}

Chiba, T. ^{[1
]}

Nakagawa, M. ^{[1
]}

Kashiwaba, Y. ^{[1
,2
]}

Niikura, I. ^{[1
]}

Kashiwaba, Y. ^{[1
,2
]}

Osada, H. ^{[1
]}

机构：

[1] Iwate Univ, 4-3-5 Ueda, Morioka, Iwate 0208551, Japan

[2] Sendai Coll, Natl Inst Technol, 4-16-1 Ayashi, Sendai, Miyagi 9893128, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 18期

关键词：

SINGLE-CRYSTALS;

D O I：

10.1007/s10854-019-01499-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation detection characteristics of a device combining a YAP:Ce (cerium-doped yttrium aluminum perovskite) scintillator and a ZnO UV sensor were studied using X-ray radiation. Both ZnO and YAP have high resistance to radiation. A photoconductive-type UV sensor with comb-shaped Al electrodes with a gap of 50 mu m was fabricated on the Zn-face of a nitrogen-doped ZnO single crystal. A photocurrent spectrum of the ZnO UV sensor showed a peak at wavelength of about 370 nm, and the sensor did not show a response in wavelengths of the visible light region. Scintillation characteristics of YAP:Ce were investigated under the condition of X-ray radiation. Scintillation luminescence of YAP:Ce showed a spectrum with a peak at a wavelength of about 360 nm, which almost corresponds to the peak wavelength of a photocurrent spectrum of the ZnO UV sensor. A device having a structure in which the YAP:Ce scintillator is placed above the ZnO UV sensor was fabricated. When the YAP:Ce scintillator was irradiated by X-rays, the photocurrent of the ZnO UV sensor was proportional to the X-ray intensity. The sensitivity of the device was improved by deposition of a reflective Al film on the YAP:Ce scintillator. The device using the combination of a YAP:Ce scintillator and a ZnO UV sensor can be used as a radiation detector with high radiation resistance.

引用

页码：16873 / 16877

页数：5

共 20 条

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