45Gbit/s AlGaAs/GaAs HEMT multiplexer IC

被引：4
作者：
Lao, Z
Nowotny, U
Thiede, A
Hurm, V
Kaufel, G
RiegerMotzer, M
Bronner, W
Seibel, J
Hulsmann, A
机构：
[1] Fraunhofer-Inst. Appl. Solid-S., D-79108 Freiburg
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 07期
关键词：
high electron mobility transistors; multiplexing; integrated circuits;
D O I：
10.1049/el:19970364
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-speed time-division 2:1 multiplexer is presented. The IC is fabricated with the authors' standard 0.2 mu m gate-length enhancement and depletion A1GaAs/GaAs HEMT technology (f(T) = 60 and 55GHz). The circuit can operate up to 45Gbit/s using single-ended data and clock inputs. The differential output voltage is 1V(p-p). The power consumption is 500mW using a single supply voltage of -4.5V.
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页码：589 / 590
页数：2
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